在不用金作掩蔽膜的情况下，在氢氟酸混合液中对采用直流反应溅射方法制备的Ｔａ２Ｏ５薄膜进行选择性腐蚀，制成Ｔａ２Ｏ５膜Ｈ＋－ＩＳＦＥＴ。测试结果表明，该器件在灵敏度、线性范围、线性度、响应时间、滞后、时漂和选择性等方面普遍优于Ｓｉ３Ｎ４膜同类器件。可直接用于溶液的ｐＨ值测量。 The Ta2O5 film prepared by direct current reactive sputtering method was selectively etched in hydrofluoric acid solution to form Ta2O5 film H + -ISFET without gold as masking film. The test results show that the device is generally superior to similar Si3N4 film devices in terms of sensitivity, linearity, linearity, response time, hysteresis, time drift and selectivity. Can be used directly for pH measurement of solutions.