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采用俄歇电子能谱仪(AES)对液相外延生长的GaAs-AlxGa_(1-x)As异质结构进行了研究.结果表明,在异质结界面处,有一过渡层,其组分由异质结的一边向另一边单调地变化,该层的厚度依赖于溶液的饱和度.还对样品表面的沾污情况进行了观测.
The GaAs-AlxGa_ (1-x) As heterostructures grown by liquid phase epitaxy have been studied by Auger electron spectroscopy (AES). The results show that there is a transition layer at the interface of heterojunction, The side of the heterojunction monotonically changes to the other side, the thickness of the layer depends on the saturation of the solution, and the contamination of the sample surface is also observed.