论文部分内容阅读
用电沉积法分别制备了具有不同调制波长的Ag/Cu和Cu/Ni金属多层膜,研究了多层膜的硬度与调制波长之间的关系。结果表明,当调制波长λ>300 nm时,两种多层膜的硬度与调制波长符合位错塞积机制的Hall-Petch关系,当λ<300 nm时,都偏离了Hall-Petch关系;Ag/Cu和Cu/Ni多层膜分别在λ=50 nm和100 nm处取得硬度峰值。基于Cheng等人的电子理论分别求出了Ag、Cu和Ni金属晶体的位错稳定的临界晶粒尺寸,进而定量地解释了Ag/Cu和Cu/Ni金属多层膜硬度峰值位置。
The Ag / Cu and Cu / Ni multilayers with different modulation wavelength were prepared by electrodeposition method respectively. The relationship between the hardness and the modulation wavelength was studied. The results show that when the modulation wavelength λ> 300 nm, the hardness and modulation wavelength of the two multilayer films are in accordance with the Hall-Petch relationship of the dislocation plugging mechanism. When λ <300 nm, both of them deviate from the Hall-Petch relationship. Ag / Cu and Cu / Ni multilayers were obtained at λ = 50 nm and 100 nm at the peak hardness. Based on the electron theory of Cheng et al., The critical grain size of the dislocation stability of the Ag, Cu and Ni metal crystals was respectively determined, and then the hardness peak positions of the Ag / Cu and Cu / Ni metal multilayer films were quantitatively explained.