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应用MonteCarlo方法模拟千电子伏低能束作用下 ,不同衬底上不同薄膜背散射电子发射 .应用Mott散射截面和Joy方法修正的Bethe方程描述和计算低能电子在固体中弹性和非弹性散射 ,引入边界方程 ,修正穿越薄膜与衬底界面的电子散射路径 .计算分析了薄膜背散射系数 η随薄膜厚度D的变化和规律 ,以及不同情况下 η D线性区范围的分布及其定量结果Dmax.计算了背散射电子角分布和空间密度分布 .
The backscattering electron emission of different thin films on different substrates was simulated by Monte Carlo method under the action of low electron beam energy, and the Bethe equation modified by Joy’s method was used to describe and calculate the elastic and inelastic scattering of low energy electrons in solid, Equation was used to correct the electron scattering path through the interface between the film and the substrate.The variation and regularity of the film backscattering coefficient η with the film thickness D and the distribution of the linear range of η D under different conditions were calculated and calculated. Backscattered electron angular distribution and spatial density distribution.