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研究直流电弧等离子体喷射化学气相沉积金刚石膜系统中，基片温度对金刚石膜生长速率和质量的影响．实验发现，金刚石膜的生长速率和结晶性随基片温度的增加而单调增加，但是金刚石膜中非金刚石碳的质量分数先是随基片温度的增加而降低，在1000～1100℃达到最低值以后又开始随基片温度的增加而增加．
The effects of substrate temperature on the growth rate and quality of diamond films were investigated in a DC arc plasma jet CVD diamond film system. It was found that the growth rate and crystallinity of diamond films monotonically increased with the increase of substrate temperature, but the mass fraction of non-diamond carbon in diamond films first decreased with the increase of substrate temperature. After reaching the lowest value at 1000-1100 ℃, Again with the substrate temperature increases.