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利用内匹配和功率合成技术设计了X波段AlGaN/GaN HEMT功率合成放大器。电路包含有四个AlGaN/GaNHEMT和制作在Al2O3陶瓷基片上的输入输出匹配电路。在偏置条件VDS=30 V,IDS=700 mA时8 GHz测出连续波饱和输出功率达到Psat=40 dBm(10 W),最大PAE=37.44%,线性增益9 dB.
X-band AlGaN / GaN HEMT power synthesis amplifier is designed by using the internal matching and power synthesis technology. The circuit consists of four AlGaN / GaNHEMTs and input and output matching circuits fabricated on Al2O3 ceramic substrates. Continuous wave saturation was measured at 8 GHz with VDS = 30 V bias and IDS = 700 mA. Output power reached Psat = 40 dBm (10 W), maximum PAE = 37.44% and linear gain 9 dB.