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采用三电极体系,以钼片为工作电极,大面积铂网为辅助电极,饱和甘汞电极(SCE)为参比电极,以氯化铜、氯化铟、亚硒酸为原料,在无水乙醇溶液中,用阴极恒流和恒压两种沉积方法制备出CIS前驱体薄膜,采用XRD和EDAX对制备的薄膜进行了表征,分析了沉积方式、镀液离子浓度、导电盐(LiCl)含量及热处理工艺等因素对薄膜成分及形貌的影响,并对电沉积CIS薄膜的机理进行了初步探讨。在最优条件下所制备的薄膜成分接近标准比且表面致密、均匀。
A three-electrode system was used. The molybdenum plate was used as the working electrode, a large area platinum mesh was used as the auxiliary electrode, the saturated calomel electrode (SCE) was used as the reference electrode. Copper chloride, indium chloride and selenite were used as raw materials, Ethanol solution, CIS precursor thin films were prepared by constant current and constant current cathodes. The films were characterized by XRD and EDAX. The deposition methods, the concentration of plating solution, the content of LiCl And heat treatment process and other factors on the film composition and morphology, and the mechanism of the electrodeposited CIS film was discussed. Under the optimal conditions, the prepared films are close to the standard composition and the surface is dense and uniform.