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本文研究了多晶硅应变膜压力传感器制作技术,提出了防止多晶硅应变膜变形的工艺条件,研制出了多晶硅应变膜压力传感器。这一技术简单、与IC工艺较为兼容,适合研制集成压力传感器。
In this paper, the production technology of polysilicon strain film pressure sensor is studied, the technological conditions of preventing the deformation of polysilicon strain film are proposed, and the polysilicon strain film pressure sensor is developed. This technology is simple, more compatible with the IC technology, suitable for the development of integrated pressure sensor.