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采用磷同位素~(32)P 示踪法测定了钽阳极氧化膜内的含磷量并探讨了掺杂量对膜的漏电流和应力等特性的影响。结果表明,PO_4~(3-)在膜内的掺入量随溶液浓度的增加而增加,漏电流则随掺杂量的增加而减少。阳极氧化膜应力的大小与氧化条件有关,在本实验条件下压应力随溶液浓度的增大而降低,所以控制膜的掺杂可改进电容器的性能。
The content of phosphorus in tantalum anodic oxide films was determined by phosphorus isotope method and (32) P tracer method. The effects of doping amount on the leakage current and stress of the films were also discussed. The results show that the incorporation amount of PO_4 ~ (3-) in the film increases with the increase of solution concentration, while the leakage current decreases with the increase of doping amount. The size of the anodic oxide film is related to the oxidation conditions. Under the experimental conditions, the compressive stress decreases with increasing concentration of the solution, so controlling the doping of the film can improve the performance of the capacitor.