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n~(+)-Si在0.25～1.0%HF溶液中无光照和光照下的伏安曲线均明显地分为三段:在低极化下呈线性关系,对应于硅的阳极溶解,形成多孔硅层 (PSL);在中间电位区,电极部分表面为硅氧化物所覆盖,阳极溶解和非均匀电抛光过程同时进行;在高极化区,全部表面为硅氧化物所覆盖,发生均匀的电抛光过程.在上述三个区域中由交流阻抗测得的特征电容环和电感应环的变化,揭示了由单—阳极溶解逐渐转变为均匀抛光过程的一些细节,定性地说明了n~(+)-Si上进行的竞争性反应的速率是随电位而改变,并受光照影响.
The voltammetric curves of n ~ (+) - Si in 0.25% -1.0% HF solution were clearly divided into three sections with a linear relationship at low polarization, corresponding to the anodic dissolution of silicon to form porous Silicon layer (PSL). In the middle potential region, the surface of the electrode is covered with silicon oxide, the anode is dissolved and the non-uniform electropolishing process is carried out simultaneously. In the high polarization region, the entire surface is covered with silicon oxide and uniform Electropolishing process The changes of the characteristic capacitance ring and the inductive ring measured by AC impedance in the above three regions reveal some details of the gradual change from single-anode dissolution to uniform polishing process, and qualitatively illustrate that n ~ ( +) - The rate of competitive reaction on Si is a function of the potential and is affected by the illumination.