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针对目前NEAGaN光电阴极研究中Cs激活或Cs/O激活后表面状态的形成过程还不清楚的问题,围绕NEAGaN光电阴极的光电发射机理,结合GaN光电阴极激活过程中出现的现象及成功激活的最终效果,给出了GaN光电阴极铯氧激活后的表面模型[GaN(Mg):Cs]:O-Cs。利用该模型可很好地解释单独用Cs激活时约-1.0eV的有效电子亲和势和Cs/O共同激活时-1.2eV的有效电子亲和势的成因,也较好地解释了表面吸附原子的组合形式,即Cs/O激活后激活层的化学结构由Cs2O2和CsO2构成。
Aiming at the problem that the formation process of the surface state after Cs activation or Cs / O activation in NEAGaN photocathode is unclear at present, the mechanism of photoemission of NEAGaN photocathode is combined with the phenomenon of the activation of GaN photocathode and the final activation The surface model [GaN (Mg): Cs]: O-Cs after the c-oxygen activation of GaN photocathode was given. Using this model, the effective electron affinity of about -1.0 eV when activated alone with Cs and the cause of effective electron affinities of -1.2 eV when co-activated with Cs / O are well explained, as well as the surface adsorption The combination of atoms, that is activated by Cs / O activation layer of the chemical structure of Cs2O2 and CsO2 composition.