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研究了一系列由单硅烷和寡聚噻吩组成的共聚高分子膜在较宽掺杂电位范围内的光谱电化学变化规律.用PSnT表示这一系列共聚高分子,其中n表示高分子链上寡聚噻吩单元中噻吩环的个数,n分别为5,7,8,10和14.结果表明在一定的掺杂电位范围内这些PSnT膜可以可逆地电致变色.PSnT膜的光谱电化学和循环伏安研究均表明在电化学掺杂过程中PSnT膜中的寡聚噻吩单元可被两步氧化.第一步氧化生成极子,极子可二聚形成π-dimers,两者之间存在着平衡.而第二步氧化生成双极子.双极子不能稳定存在于PS5T和PS7T膜中,但可稳定存在于其它具有更长寡聚噻吩单元的PSnT膜中.结合PSnT膜在不同电位下的表观迁移率数据讨论了膜中各种载流子对表观迁移率的影响.表明当掺杂电位低于两步氧化过程的平均电位Emean时,膜中表观迁移率的增加主要是由于π-dimers的形成及数量增加所引起的.随着寡聚噻吩共轭长度(n)的增加,π-dimers更易形成,因此PSnT膜中载流子的表观迁移率在更低的掺杂电位下开始增加并具有更大的增幅.
A series of monochlorosilane and oligothiophene copolymerization polymer membrane in a wide range of doping potentials spectral electrochemical changes. PSnT said that this series of copolymer polymer, where n represents the polymer chain oligo The number of thiophene rings in the polythiophene units, n, are 5, 7, 8, 10 and 14. The results show that these PSnT films can reversibly electrochromic within a certain range of doping potentials.The spectral electrochemistry of PSnT films and Cyclic voltammetry studies have shown that the oligothiophene units in the PSnT film can be oxidized in two steps during the electrochemical doping process. In the first step, the polaron is generated by oxidation and the π-dimers are dimerized to form π-dimers. And the second step is oxidation to bipolar.The dipoles can not stably exist in the PS5T and PS7T membranes but can stably exist in other PSnT membranes with longer oligothiophene units.The binding of the PSnT membranes at different potentials The apparent mobility data of the films discuss the effect of various charge carriers on the apparent mobility, indicating that the apparent increase of the mobility in the film when the doping potential is lower than the average potential Emean of the two-step oxidation process Is due to the formation and increase of π-dimers With the increase of the conjugated length (n) of oligothiophene, π-dimers are easier to form. Therefore, the apparent mobility of carriers in PSnT films begins to increase and has a greater increase at lower doping potentials.