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3功率模块3.1功率模块的构造在一个功率模块里,数个功率半导体芯片(MOSFET或IGBT芯片以及二极管芯片)被集成到一块共同的底板上,且模块的功率器件与其安装表面(散热板)相互绝缘。这些芯片的底面被焊接于(或被粘贴于)一块绝缘基片的金属化表面上。该绝缘基片的作用是在保证良好导热性能的同时还提供了相对于模块底板的电气绝缘。芯片的上表面被金属化,它的电气连接可以采用细的铝制键接线用键接的方式来实现。
3 Power Module 3.1 Power Module Structure In a power module, several power semiconductor chips (MOSFET or IGBT chip and diode chip) are integrated into a common backplane, and the power device of the module and its mounting surface (heat sink) insulation. The undersides of these chips are soldered to (or attached to) the metallized surface of an insulating substrate. The role of the insulating substrate is to provide good electrical insulation with respect to the module backplane while ensuring good thermal conductivity. The upper surface of the chip is metallized, and its electrical connections can be made using a thin aluminum keyed connection.