在室温条件下，球磨Ｓｉ，Ｃ混合粉末合成纳米尺寸ＳｉＣ．采用高分辨电子显微术在原子尺度上详尽地表征了该反应过程．高分辨像表明，在球磨过程中首先形成非晶 Ｃ（ａ－Ｃ）、非晶 Ｓｉ（ａ－Ｓｉ）以及纳米晶 Ｓｉ（ｃ－Ｓｉ），为合成 ＳｉＣ提供了适宜条件 ＳｉＣ的合成主要是通过 Ｃ原子向 ａ－Ｓｉ及 ｃ－Ｓｉ的扩散对于前者，形成非晶 ａ－Ｓｉ（Ｃ），然后机械力诱使非晶 ａ－Ｓｉ（Ｃ）晶化；对于后者， Ｃ原子直接取代 Ｓｉ原子形成 ＳｉＣ，具有取向关系（１１１）ＳｉＣ ／／（１１１）Ｓｉ．在一些区域内，还发生局域自蔓延反应，形成稍大尺寸的 ＳｉＣ晶粒 At room temperature, Si and C powders were ball milled to synthesize nanosized SiC. High-resolution electron microscopy was used to characterize the reaction process on an atomic scale. High-resolution images show that amorphous C (a-C), amorphous Si (a-Si) and nanocrystalline Si (c-Si) are firstly formed during ball milling, which provides suitable conditions for the synthesis of SiC. For the former, amorphous a-Si (C) is formed by the diffusion of C atoms to a-Si and c-Si, and then amorphous α-Si (C) is induced by mechanical force; for the latter, C atoms are directly substituted Si atoms form SiC with orientation relationship (111) SiC // (111) Si. In some areas, localized self-propagating reactions also occur, forming slightly larger sized SiC grains