提出一种应用于CMOS图像传感器的新型光电检测器件-双极型光栅晶体管,并建立了其瞬态等效电路模型,利用电路模拟软件HSPICE的多瞬态分析法对双极型光栅晶体管的光电流特性进行了仿真,分析得出这种新型器件在0.6μmCMOS工艺参数下,由于引入pn注入结加速了光电荷的读出速率,光电流随外加电压呈指数式增长,与普通光栅晶体管相比,蓝光响应特性有较大改善。 A new photoelectric detection device - bipolar grating transistor applied to CMOS image sensor was proposed and its transient equivalent circuit model was established. The multi-transient analysis method of HSPICE was used to simulate the light of bipolar grating transistor The simulation results show that the new device accelerates the readout rate of photocharges due to the introduction of pn implanted junctions under 0.6μm CMOS process. The photocurrent increases exponentially with the applied voltage, compared with the normal grating transistors , Blue response characteristics have greatly improved.