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The Ag/Mg_(0.2)Zn_(0.8)O/ZnMn_2O_4/p~+-Si heterostructure devices were fabricated by sol-gel spin coating technique and the resistive switching behavior,conduction mechanism,endurance characteristic,and retention properties were investigated.A distinct bipolar resistive switching behavior of the devices was observed at room temperature.The resistance ratio R_(HRS)/R_(LRS) of high resistance state and low resistance state is as large as four orders of magnitude with a readout voltage of 2.0 V.The dominant conduction mechanism of the device is trap-controlled space charge limited current(SCLC).The devices exhibit good durability under 1×10~3cycles and the degradation is invisible for more than 10~6 s.
The Ag / Mg_ (0.2) Zn_ (0.8) O / ZnMn_2O_4 / p ~ + -Si heterostructure devices were fabricated by sol-gel spin coating technique and the resistive switching behavior, conduction mechanism, endurance characteristic, and retention properties were investigated. distinct bipolar resistive switching behavior of the devices was observed at room temperature. The resistance ratio R_ (HRS) / R_ (LRS) of high resistance state and low resistance state is as large as four orders of magnitude with a readout voltage of 2.0V. The dominant conduction mechanism of the device is trap-controlled space charge limited current (SCLC). The devices exhibit good durability under 1 × 10 ~ 3cycles and the degradation is invisible for more than 10 ~ 6 s.