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用原子力显微镜（ＡＦＭ）研究了ｐ型高阻Ｃｄ０．８Ｚｎ０．２Ｔｅ晶体表面状况对接触电学特性的影响，研究了三种金属（Ａｎ、Ａｌ、Ｉｎ）和ＡｕＣｌ３作为接触层材料的电学特性和接触机理。研究表明采用化学方法沉积ＡｕＣｌ３膜能在ＣｄＺｎＴｅ光滑表面形成一层重掺杂层（ｐ＋），较金属更易获得欧姆接触，热处理可改善接触的欧姆性，并增强接触层与晶体表面的结合力。
The influence of the surface condition of the p-type high resistance Cd0.8Zn0.2Te crystal on the electrical contact properties was investigated by atomic force microscopy (AFM). The electrical properties and contact of the three kinds of metals (An, Al, In) and AuCl3 mechanism. The results show that the chemical deposition of AuCl3 film can form a heavily doped layer (p +) on the smooth surface of CdZnTe, which is easier to obtain ohmic contact than metal. The heat treatment can improve the ohmic contact and enhance the adhesion between the contact layer and the crystal surface.