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基于北京HI-13串列加速器质子源及技术改进工作,获得2~15 MeV低能质子束流。针对商业级65nm工艺4M×18bit大容量随机静态存储器(SRAM),开展了质子单粒子翻转实验研究。实验结果表明,低能质子通过直接电离机制可在存储器中引起显著的单粒子翻转,其翻转截面较核反应机制引起的翻转截面大2~3个数量级。结合实验数据分析了质子翻转机制、LET值及射程、临界电荷及空间软错误率等,分析结果表明,实验器件翻转临界电荷约为0.97fC,而低能质子超过高能质子成为质子软错误率的主要贡献因素。
Based on Beijing HI-13 tandem accelerator proton source and technology improvements, 2 ~ 15 MeV low-energy proton beam was obtained. Aiming at commercial 4M × 18bit large capacity random static memory (SRAM) of 65nm process, a proton single-particle inversion experiment was carried out. The experimental results show that the low energy proton can cause significant single-particle inversion in the memory by direct ionization mechanism, and the inversion cross-section of the low-energy proton can be 2 to 3 orders of magnitude larger than that caused by the nuclear reaction mechanism. The experimental results show that the critical charge of the experimental device is about 0.97 fC, and the proton over the high energy proton becomes the main proton soft error rate Contributing factors.