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研究Ta2 O5对 (Sr,Bi,Si,Ta)掺杂的TiO2 基压敏陶瓷压敏特性及电容特性的影响 ,发现按配方TiO2+0 .3%(SrCO3+Bi2 O3+SiO2 ) +0 .1 %Ta2 O5配制的样品具有最低压敏电压 (E1 0mA =1 .2V·mm- 1 )、最大相对介电常数 (εra=2 .0 0 2× 1 0 5)及较小非线性系数 (α =2 .6 )。考虑到材料的低压敏电压和大介电常数的要求 ,Ta2 O5最佳掺杂量在 0 .0 85mol%与 0 .1mol%之间。
The effect of Ta2 O5 on the pressure-sensitive properties and capacitance characteristics of (Sr, Bi, Si, Ta) -doped TiO2-based piezoceramics was investigated. It was found that the TiO2 + 0.3% (SrCO3 + Bi2 O3 + SiO2) +0. The samples prepared with 1% Ta2 O5 have the lowest voltage-dependent voltage (E1 0mA = 1.2V · mm-1), the maximum relative permittivity (εra = 2.0002 × 10 5) and the smaller nonlinear coefficient α = 2 .6). Taking into account the material’s low voltage sensitivity and large dielectric constant requirements, Ta2 O5 optimal doping amount between 0. 0 85mol% and 0 .1mol%.