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展示了一种基于超导NbN薄膜材料的HEB混频器的设计与制备工艺,详细介绍了高阻硅衬底上的超薄NbN薄膜的生长技术、HEB器件的结构、超导微桥区和平面等角螺旋天线的阻抗匹配等内容.测量研究了超导NbN HEB的电阻-温度(R-T)曲线、不同温度下的电流-电压(I-V)曲线以及HEB对太赫兹(THz)信号的响应特性.用Y因子方法测量了HEB器件的噪声温度,在2.5THz的太赫兹波辐照下,其最低噪声温度为2213K.
A design and fabrication process of an HEB mixer based on superconducting NbN thin films are presented. The growth techniques of ultra-thin NbN thin films on high-resistance silicon substrates, the structure of HEB devices, Impedance matching of flat equiangular spiral antenna, etc. The resistance-temperature (RT) curve of superconducting NbN HEB, the current-voltage (IV) curves at different temperatures and the response characteristics of HEB to THz signals were investigated. The noise temperature of HEB device was measured by Y - factor method, and the lowest noise temperature was 2213K under the irradiation of 2.5 THz THz wave.