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采用热丝辅助反应溅射和等离子体增强热丝化学气相沉积（ＣＶＤ）的制备方法，获得了含有β－Ｃ３Ｎ４结晶相的ＣＮｘ薄膜．文章将重点介绍制备参数与ＣＮｘ薄膜结构的关系，并进一步讨论与β－Ｃ３Ｎ４结晶相择优生长有关的主要问题
CNx thin films containing β-C3N4 crystal phase were obtained by hot wire assisted reactive sputtering and plasma enhanced hot filament chemical vapor deposition (CVD). The article will focus on the relationship between the fabrication parameters and CNx film structure and further discuss the main issues associated with the preferred growth of β-C3N4 crystals