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利用光刻胶作刻蚀掩模对半导体样品进行感应耦合等离子体干法刻蚀时发现光刻胶掩模在刻蚀后表面出现凸起和孔洞等异常现象,等离子体会透过部分孔洞对样品表面产生刻蚀损伤。利用探针式表面轮廓仪和激光共聚焦显微镜对这些异常现象进行了分析,认为是刻蚀时等离子体气氛中的紫外线对作为掩模的光刻胶进行了曝光作用而释放出一定量的氮气,从而在光刻胶内外形成了压强差而使光刻胶局部表面产生微凸起;当光刻胶的强度无法阻止内部氮气的膨胀时,则会发生类似爆炸的效果,在光刻胶表面形成孔洞状缺陷,导致掩模保护作用的失效。
Photoresist etching mask for semiconductor samples by inductively coupled plasma dry etching found in the photoresist mask surface after the emergence of bumps and holes and other anomalies, the plasma will be part of the hole through the sample Surface damage caused by etching. Using the probe surface profiler and confocal laser scanning microscope to analyze these anomalies, it is considered that the UV light in the plasma atmosphere during etching exposes the photoresist as a mask to release a certain amount of nitrogen , Resulting in the formation of a pressure difference inside and outside the photoresist so that the local surface of the photoresist microprotrusions; when the intensity of the photoresist can not prevent the expansion of the internal nitrogen, it will have a similar effect of the explosion in the photoresist surface Hole-like defects, resulting in the failure of mask protection.