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研究了 In P/In P的直接键合技术 ,给出了详细的 In P/In P键合样品的电特性随健合工艺条件变化的数据 ,在低于 6 5 0℃的键合温度下实现了 In P/In P大面积的均匀直接键合 ,获得了与单晶 In P衬底相同的电特性和机械强度 .在器件的键合实验中也获得了成功 ,在 In Ga As P/In P多量子阱激光器结构的外延面上键合 p- In P衬底后制作的激光器激射特性良好 .
The direct bonding technology of In P / In P was studied. The detailed electrical characteristics of the In P / In P bonding samples were given with the data of the bonding process. Under the bonding temperature of less than 650 ℃, And achieved a large area of In P / In P uniform bonding directly to obtain the single crystal In P substrate with the same electrical properties and mechanical strength in the device bonding experiments have also been successful in the In Ga As P / InP multiple quantum well laser structure of the epitaxial surface bonded p-InP substrate lasers produced lasing characteristics good.