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Wide bandgap(3.37 eV)and high excitonbinding energy of ZnO(60 meV)make it a promising candidate for ultraviolet light-emitting diodes(LEDs)and low-threshold lasing diodes(LDs).However,the difficulty in producing stable and reproducible high-quality p-type ZnO has hindered the development of ZnO p–n homojunction LEDs.An alternative strategy for achieving ZnO electroluminescence is to fabricate heterojunction devices by employing other available p-type materials(such as p-GaN)or building new device structures.In this article,we will briefly review the recent progress in ZnO LEDs/LDs based on p–n heterostructures and metal–insulatorsemiconductor heterostructures.Some methods to improve device efficiency are also introduced in detail,including the introduction of Ag localized surface plasmons and single-crystalline nanowires into ZnO LEDs/LDs.
Wide bandgap (3.37 eV) and high exciton binding energy of ZnO (60 meV) make it a promising candidate for ultraviolet light-emitting diodes (LEDs) and low-threshold lasing diodes (LDs) .However, the difficulty in producing stable and reproducible high -quality p-type ZnO has hindered the development of ZnO p-n homojunction LEDs. An alternative strategy for achieving ZnO electroluminescence is to fabricate heterojunction devices by employing other available p-type materials (such as p-GaN) or building new device structures .In this article, we will briefly review the recent progress in ZnO LEDs / LDs based on p-n heterostructures and metal-insulatorsemiconductor heterostructures. Home methods to improve device efficiency are also introduced in detail, including the introduction of Ag localized surface plasmons and single-crystalline nanowires into ZnO LEDs / LDs.