论文部分内容阅读
文章设计了一种高电源电压抑制比的带隙基准电压源。利用两级单端输出运算放大器给基准源提供偏置电压,使核心电路部分脱离电源电压的噪声影响,且在放大器的输出与尾电流管的栅极之间添加共源放大器构成调节型共源共栅反馈回路,提高放大器的低频增益,同时使放大器电源到输出的增益接近于1,从而达到高电源抑制比。基于NUVOTON 0.35μm CMOS工艺,采用Cadence软件的Spectre工具完成电路设计的仿真与调试。电源电压采用3.3V。仿真结果表明放大器低频增益达95d B,电源到输出的增益为0.958。温漂系数达10.33ppm/℃,电源抑制比达到-127d B@10Hz。该带隙基准电压源可应用于CMOS图像传感器。
The article designs a bandgap voltage reference with high supply voltage rejection ratio. A two-stage single-ended output operational amplifier is used to provide a bias voltage to a reference source, so that the core circuit is partially free from the noise of the power supply voltage. A common-source amplifier is formed between the output of the amplifier and the gate of the tail current tube to form a regulated common source Common-gate feedback loop to improve the amplifier’s low-frequency gain, while the amplifier power to the output gain close to 1, so as to achieve high power supply rejection ratio. Based on NUVOTON 0.35μm CMOS technology, using Spectre tool Cadence software to complete the circuit design simulation and debugging. 3.3V power supply voltage. Simulation results show that the amplifier low-frequency gain of 95d B, power to output gain of 0.958. The temperature coefficient of drift reaches 10.33ppm / ℃, the power supply rejection ratio reaches -127d B @ 10Hz. The bandgap voltage reference can be applied to CMOS image sensors.