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为了给星用半导体器件不同区域的单粒子翻转(SEU)机理研究提供一种高效、可靠手段,基于北京HI-13串列加速器,从重离子微束辐照技术和存储器单粒子效应检测技术这2方面,对微电子器件SEU二维成像测试技术进行了研究,建立了基于虚拟技术的测试系统。利用该成像技术,对国产2 kbit静态随机存储器(SRAM)的SEU敏感区域进行了实验研究,结果与理论结果及以往手动测试实验结果一致。
In order to provide an efficient and reliable method for single-particle flip (SEU) mechanism research in different regions of star semiconductor devices, based on Beijing HI-13 Tandem Accelerator, from the technology of heavy ion beam irradiation and memory single particle effect detection In the aspect, the two-dimensional imaging test technology of microelectronic device SEU was studied, and the test system based on virtual technology was established. Using this imaging technique, the SEU-sensitive region of 2 kbit static random access memory (SRAM) made in China was experimentally studied. The results are in good agreement with the theoretical results and the results of the manual test in the past.