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利用变分原理及有效质量近似,研究In组份对InxGa1-xN/GaN量子阱光学性质的影响,结果表明,考虑内电场的影响后,电子与空穴复合率减小,随着势垒层In组份的增加,激子结合能、基态振子强度增大,发光波长反而减小。
The effect of In composition on the optical properties of InxGa1-xN / GaN quantum wells is investigated by using the variational principle and the effective mass approximation. The results show that the recombination rate of electrons and holes decreases with the influence of internal electric field, The increase of In composition, the exciton binding energy, the ground state oscillator strength increase, but the emission wavelength decreases.