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本文报道了在77K下测得溅射工艺制备非晶态硅的光致发光光谱,并与辉光放电工艺制得非晶态硅的光致发光光谱作了比较。文中还讨论了由于沉积温度T_d的不同,给予带隙内辐射复合渠道所带来影响而使发光特性发生的变化。
In this paper, the photoluminescence spectra of amorphous silicon prepared by sputtering at 77K were reported and compared with that of amorphous silicon prepared by glow discharge. The paper also discusses the variation of the luminescence properties due to the influence of the deposition temperature T_d on the radiation channels in the band gap.