陶瓷片状磷源扩散至今已有十几年历史。近几年来,我们成功的将其用于线阵、面阵、PtSi-SiSBIRCCD的研制中。 我们选择的典型磷扩散条件为: 炉温(℃):1034～1100 氮气流量(ml/mm):500～600 扩散时间(分):8～10 方块电阻(R_(口多)Ω/:15～80(R_(口多)是多晶硅膜层的方块电阻) 间距(mm):3～5 使用中,如果在磷浓度能做到的情况下,尽量不要在高温度下长时间扩散,这是因为高 Ceramic flake phosphorus source diffusion has been more than ten years of history. In recent years, we have successfully used it in the development of linear array, area array, PtSi-SiSBIRCCD. The typical phosphorus diffusion conditions we choose are as follows: Furnace temperature (° C): 1034 ~ 1100 Nitrogen flow rate (ml / mm): 500 ~ 600 Diffusion time: 8 ~ 10 Box resistance ~ 80 (R_ (multi) is the sheet resistance of the polycrystalline silicon film) Pitch (mm): 3 ~ 5 If the phosphorus concentration can be used, try not to prolong the diffusion at high temperature for a long time. Because of high