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为了在不提高驱动电流的前提下增大垂直腔面发射激光器的输出功率,提出了一种将多个垂直腔面发射激光器芯片串接在一起的结构。首先,将垂直腔面发射激光器芯片焊接在氮化铝陶瓷热沉上,接着用金丝引线的方法以串联方式将芯片连接在一起。分别测试了串接4个、2个和单个芯片器件的微秒脉冲输出功率和纳秒脉冲输出功率,其分别为775,416,217mW和18.9,9.8,5W,测试结果显示串接4个和2个芯片器件的输出功率分别约为单个芯片输出功率的4倍和2倍。串接多个芯片器件的发射光谱半高宽(FWHM)比单个器件的略宽,但是可以通过选择均一性良好的芯片来解决这一问题。实验显示,串接结构可以实现在不提高驱动电流的条件下大幅度提高输出功率。
In order to increase the output power of a vertical cavity surface emitting laser without increasing the driving current, a structure in which a plurality of vertical cavity surface emitting laser chips are connected in series is proposed. First, the vertical cavity surface emitting laser chip is soldered on an aluminum nitride ceramic heat sink, followed by a gold wire lead to connect the chips together in series. The microsecond pulse output power and nanosecond pulse output power of series 4, 2 and single chip devices were tested respectively at 775, 416, 217mW and 18.9, 9.8 and 5W respectively. The test results showed that 4 and 2 chips The output power of the device is about 4 and 2 times of the output power of a single chip respectively. The emission spectrum FWHM of cascaded multi-chip devices is slightly wider than that of a single device, but this problem can be solved by selecting chips with good uniformity. Experiments show that cascaded structure can achieve a substantial increase in output power without increasing the drive current conditions.