用半绝缘多晶硅(SIPOS)膜代替了平面器件的二氧化硅钝化层。SIPOS膜是掺杂氧原子或氮原子的化学汽相淀积多晶硅,验证了掺氧多晶硅膜的钝化性质与氧浓度的关系。 在有场限制环的类似平面结构中,采用SIPOS工艺制造了800伏和2500伏级的npn晶体管和pnp晶体管。即使把芯片暴露在100℃水蒸气和200℃的钠杂质中,800伏pnp晶体管的漏电流不会增加。因此,SIPOS晶体管能用与金属管壳一样好的低价环氧树脂封装。而且,已用复环结构制作了10KV SIPOS晶体管,并发现它们的工作是稳定的。 A silicon oxide passivation layer of a planar device is replaced by a semi-insulating polysilicon (SIPOS) film. The SIPOS film is chemically vapor deposited polycrystalline silicon doped with oxygen atoms or nitrogen atoms, verifying the relationship between the passivation properties and oxygen concentration of the oxygen-doped polycrystalline silicon film. In a similar planar structure with a confinement ring, npn transistors and pnp transistors of 800 volts and 2500 volts are fabricated using the SIPOS process. The leakage current of the 800-volt pnp transistor does not increase even if the chip is exposed to water vapor at 100 ° C and sodium impurities at 200 ° C. As a result, SIPOS transistors can be packaged with as inexpensive epoxy as metal tubes. Also, 10KV SIPOS transistors have been fabricated using a multi-ring structure and found to work stably.