EBWF-6型微细加工设备,能制作适用于高密度封装的窄达0.1微米的线宽图形,该设备可以用来制作复杂的掩模原版和1倍掩模,并能在硅片上直接扫描。一种6MHz矢量扫描偏转系统只把将要曝光的区域带到电子束照射之下,可以处理从不规则GaAs场效应晶体管到5英寸的掩模衬底。一种具有0.026微米分瓣率的双频道激光干涉仪有助于确定工作台的位置,补偿拓扑绘图技术允许使用正常不平度公差较低的衬底。 The EBWF-6 microfabrication equipment produces linewidth patterns as narrow as 0.1 microns for high-density packaging that can be used to create complex mask masters and 1 time mask and scan directly on silicon . A 6MHz vector scan deflection system takes only the area to be exposed to electron beam radiation and can handle irregular GaAs field effect transistors to a 5-inch mask substrate. A dual-channel laser interferometer with a fractional aperture of 0.026 microns helps to determine the position of the stage, and compensated topography techniques allow the use of substrates with lower normal-roughness tolerances.