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分析了纳秒级脉冲激光作用下GaN的激光诱导Zn的掺杂过程.利用简化的一维模型,给出一种比较直观的脉冲激光辐照下GaN/Al2O3材料温度分布的解析形式,得到了GaN材料表面温度与激光辐照时间的关系以及材料形变与深度的关系.在激光脉冲作用时,GaN材料表面的温度与辐照时间的平方根成正比.脉冲过后,材料温度分布梯度和热形变分布随深度发生变化,接近表面的温度梯度最大,热形变量也最大.而在连续脉冲作用时表面的温度呈锯齿状不断升高.
The laser induced Zn doping process of GaN under the nanosecond pulsed laser was analyzed.A simplified analytical model of the temperature distribution of GaN / Al 2 O 3 under pulsed laser irradiation was given using a simplified one-dimensional model. The relationship between the surface temperature of GaN and the irradiation time of the laser and the relationship between the material deformation and the depth are shown in Figure 1. The temperature of the surface of the GaN material is proportional to the square root of the irradiation time when the laser pulse is applied. As the depth changes, the temperature gradient near the surface is the largest and the thermal deformation is also the largest, while the surface temperature increases continuously in a jagged manner during the continuous pulse.