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直接键合硅片界面的键合能依赖于界面成键的密度 ,是退火温度和时间的函数 ,界面反应激活能决定着成键的行为 .硅片键合能随退火温度分两步增加 ,这种现象被归因于界面反应存在两种不同的激活能 .将硅本征氧化层与硅热氧化层两种键合界面在退火过程中的行为进行了理论分析与比较 .硅本征氧化层的键合能随温度的增加要比热氧化层界面的大 .键合能的饱和时间与激活能密切相关
Bonding at the interface of the direct bonding silicon wafer can depend on the density of bonding at the interface and is a function of annealing temperature and time, and the activation of the interfacial reaction determines the bonding behavior. The silicon bonding can increase with the annealing temperature in two steps, This phenomenon is attributed to the existence of two different activation energies in the interface reaction.The behavior of the two bonded interfaces of silicon intrinsic oxide layer and silicon thermal oxide layer during annealing is theoretically analyzed and compared.The intrinsic oxidation of silicon The bonding energies of the layers are larger with the increase of temperature than that of the thermal oxide layer.The bonding time is related to the activation energy