利用原子力显微镜研究了不同淀积温度条件下低压化学气相淀积（ＬＰＣＶＤ）多晶硅薄膜的表面形貌．发现淀积时间一定时，随着淀积温度的升高，多晶硅薄膜的晶粒尺寸和表面粗糙度均非线性地增大．另外，还研究了不同基片温度条件下磁控溅射铝硅含金薄膜的表面形貌． Atomic force microscopy was used to study the surface morphology of low pressure chemical vapor deposition (LPCVD) polysilicon films at different deposition temperatures. When the deposition time is found to be constant, as the deposition temperature increases, the grain size and surface roughness of the polycrystalline silicon film increase nonlinearly. In addition, the surface morphology of Al-Si-Au thin films magnetron sputtering under different substrate temperature was also studied.