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讨论一款基于SiGe BiCMOS工艺工作速率为10Gb/s激光驱动芯片的设计.该激光驱动芯片包括输入缓冲、驱动放大电路和输出级电路3个部分.输入缓冲、驱动放大电路采用电流模电路,满足高速数据传输和放大的能力,输出级电路结构采用新型的MOS-HBT共源共栅结构可以降低米勒效应减小输入电容,从而使激光驱动芯片工作在10Gb/s时也能达到良好的性能.主电路电源电压为3.3V,输出级电路供电电压为5.5V,确保激光器有足够的电压摆幅.芯片总面积(包括焊盘)为600μm×800μm,,测试表明当输入10Gb/s的非归零随机码,输出级电源电压为5.5V时,电路总功耗为660mW,在50Ω负载上可以提供3V的驱动电压(相应的驱动电流为60mA).测试眼图清晰,可以很好地满足SDH STM64/SONNET OC192和10Gb/s以太网的模板要求.
Discuss the design of a 10Gb / s laser driving chip based on the SiGe BiCMOS process, which includes three parts: input buffer, driver amplifier and output stage. The input buffer and driver amplifier adopt current mode circuit to satisfy High-speed data transmission and amplification capability, output stage circuit structure The new MOS-HBT cascode structure can reduce the Miller effect and reduce the input capacitance, so that the laser driver chip can work well at 10Gb / s to achieve good performance Main circuit power supply voltage is 3.3V, the output stage supply voltage of 5.5V, to ensure that the laser has enough voltage swing. The total chip area (including the pad) is 600μm × 800μm, the test shows that when the input 10Gb / s of non Zero random code, the output stage supply voltage of 5.5V, the total circuit power consumption of 660mW, 50V load can provide 3V drive voltage (the corresponding drive current of 60mA). Test eye clear, well to meet SDH STM64 / SONNET OC192 and 10Gb / s Ethernet template requirements.