AlGaAs/InGaAs high electron mobility transistors (HEMTs) and AlAs/GaAs resonant tunnelling diodes (RTDs) are integrated on GaAs substrates. Molecular beam epita
A laser-diode-pumped 1.54-μm passive Q-switched erbium doped glass laser was reported. We utilize a laser diode with wavelength of 973 nm to pump a 1-mm Er/Yb
Photoconductive properties of photodiodes based on composites of CuS nanoparticles and Poly[2-methoxy, 5-(2-ethylhexyloxy)-p-phenylenevinylene] (MEH-PPV) are in
Fe29Co71 and Fe19Ni8 antidot arrays, with different dimensions, are prepared with the rf magnetron sputtering method onto the porous alumina substrate. The size
The Darboux transformation of a differential-difference equation associated with a 3 x 3 matrix spectral problem is derived. As an application, explicit soliton