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利用常压化学气相淀积（ＡＰＣＶＤ）设备，在单晶Ｓｉ片上淀积出了一层ＳｉＣ薄膜．这种ＳｉＣ薄膜可以用作场致发射的阴极，该文报道了其场致发射的Ｉ～Ｖ特性测试结果．结果表明，该薄膜的场致发射具有Ｆｏｗｌｅｒ－Ｎｏｒｄｈｅｉｍ的指数形式，而其发射场强的阈值约为１Ｖ／μｍ．在测试出的Ｉ～Ｖ特性曲线上，发现了共振隧穿特征．该特征值得进一步研究
Using atmospheric pressure chemical vapor deposition (APCVD) equipment, a layer of Si film is deposited on the SiC film. This SiC thin film can be used as a cathode for field emission. This article reports the results of its field emission I ~ V characteristic test. The results show that the field emission of the film has an exponential form of Fowler-Nordheim, and the threshold of its emission field intensity is about 1V / μm. Resonant tunneling characteristics were found on the tested I ~ V characteristic curves. This feature deserves further study