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采用离子束溅射方法制备出TiO2/ITO,Zr4+掺杂的TiO2(TiO2-Zr)/ITO和ZrO2/TiO2/ITO复合薄膜.利用表面敏化方法制备出(1,10-邻菲咯啉)2(3,4,5-三氟苯基)咪唑并[5,6-f]邻菲咯啉钌混配配合物[Rup2O](p=1,10-邻菲咯啉,O=(3,4,5-三氟苯基)咪唑并[5,6-f]邻菲咯啉)/TiO2/ITO,Rup2O/TiO2-Zr/ITO和Rup2O/ZrO2/TiO2/ITO表面敏化TiO2基复合薄膜.表面光电压谱(SPS)表明,表面敏化TiO2基复合薄膜在400～600和350 nm产生的SPS响应峰的峰高比与TiO2基复合薄膜的结构密切相关.利用电场诱导表面光电压谱(EFISPS)确定了复合薄膜的能带结构,其结果分析表明,400～600 nm的SPS响应峰主要源于Rup2O分子的中心离子Ru 4d能级到配体邻菲咯啉π1*和配体咪唑并邻菲咯啉π2*跃迁;TiO2禁带内Zr4+掺杂能级的存在减小了光生载流子的复合,增加导带光生电子的数量;ZrO2/TiO2异质结构的存在有利于光生电子向ITO表面的转移,从而导致400～600 nm和350 nm SPS响应峰的峰高比的增加,意味着光致电荷转移效率的提高.
TiO2 / ITO, Zr4 + -doped TiO2 (TiO2-Zr) / ITO and ZrO2 / TiO2 / ITO composite thin films were prepared by ion beam sputtering method.The (1,10-phenanthroline) 2 (3,4,5-trifluorophenyl) imidazo [5,6-f] phenanthroline ruthenium complex compound [Rup2O] (p = 1,10-phenanthroline, O = / TiO2 / ITO, Rup2O / TiO2-Zr / ITO and Rup2O / ZrO2 / TiO2 / ITO surface-sensitized TiO2-based composites The results of surface photovoltage spectroscopy (SPS) show that the peak height ratio of SPS response peak at 400 ~ 600 and 350 nm is closely related to the structure of TiO2-based composite thin films.Using the field-induced surface photovoltage spectroscopy EFISPS) to determine the band structure of the composite films, the results show that the SPS response peak at 400 ~ 600 nm mainly from Rup2O molecular center ion Ru 4d level to the ligand phenanthroline π1 * and ligand imidazole and Phenanthroline π2 * transition; the presence of Zr4 + doping levels in the forbidden band reduces the recombination of photogenerated carriers and increases the number of photogenerated electrons in the conduction band; the presence of ZrO2 / TiO2 heterostructures favors the photogenerated electron direction ITO surface transfer, resulting in 400 ~ 600 nm and 350 nm The increase in the peak-to-height ratio of the SPS response peak means an increase in photo-charge transfer efficiency.