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利用金属有机化合物气相沉积设备生长了不同盖层结构的InAs/GaAs量子点,采用原子力显微镜和光致发光光谱仪对量子点的结构和光学性质进行了研究.量子点层之间的盖层由一个低温层和一个高温层组成.对不同材料结构的低温盖层的对比研究表明,In组分渐变的InGaAs低温盖层有利于改善量子点均匀性、减少结合岛数目、提高光致发光强度;当组分渐变InGaAs低温盖层厚度由6.8nm增加到12nm,发光波长从1256.0nm红移到1314.4nm.另外,还对不同材料结构的高温盖层进行了对比分析,发现高温盖层采用In组分渐变的InGaAs材料有利于光致发光谱强度的提高.
The InAs / GaAs quantum dots with different capping structures were grown by metal organic vapor deposition equipment. The structure and optical properties of quantum dots were studied by atomic force microscopy and photoluminescence spectroscopy. The capping layer between quantum dots was composed of a low temperature Layer and a high temperature layer.Comparison studies on the low temperature caprock of different material structures show that the InGaAs low temperature caprock with gradient In composition can improve the quantum dot uniformity and reduce the number of bonded islands and enhance the photoluminescence intensity.When the group The thickness of low temperature capping InGaAs layer increased from 6.8nm to 12nm, and the emission wavelength was red-shifted from 1256.0nm to 1314.4nm. In addition, the high temperature capping layers of different materials were also analyzed and compared. Of InGaAs material is conducive to the improvement of photoluminescence intensity.