绝缘体上硅(SOI)材料的激光损伤特性研究对基于该材料的光学器件在激光环境中的应用具有重要价值。本文使用1064 nm脉冲激光对SOI材料进行了辐照实验,在脉冲宽度分别为190 ps和280μs的条件下,测得的损伤阈值能量密度分别为2.5 J/cm2和19.8 J/cm2,SOI材料表面的激光损伤模式也存在明显差别。根据实验结果,利用ANSYS软件的热分析模块,采用有限元方法数值模拟了激光辐照结束后SOI材料内部的温度场分布,并结合损伤形貌的观测对SOI材料的激光损伤机制进行了讨论。 The study of the laser damage characteristics of silicon on insulator (SOI) materials is of great value to the application of optical devices based on this material in the laser environment. In this paper, a 1064 nm pulsed laser was used to irradiate the SOI material. The damage threshold energy densities were 2.5 J / cm 2 and 19.8 J / cm 2 at pulse widths of 190 ps and 280 μs, respectively. The surface of SOI material There are also significant differences in laser damage patterns. According to the experimental results, the thermal analysis module of ANSYS was used to simulate the temperature field distribution inside the SOI after laser irradiation by finite element method. The laser damage mechanism of SOI was discussed with the observation of damage morphology.