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本文研究了用低压金属有机化合物汽相外延（ＬＰ－ＭＯＣＶＤ）技术在（１００）ＩｎＰ衬底上生长ＩｎＧａＡｓｐ体材料及ＩｎＧａＡＰ／ＩｎＰ量子阱结构材料的生长条件。三甲基镓（ＴＭ６３）、三甲基铟（ＴＭｈ）和纯的砷烷（Ａ８Ｈ３）、磷烷（ＰＨ３）分别用作Ⅲ族和Ⅴ族源，在非故意掺杂情况下，ＩｎＧａＡｓＰ材料的载流子浓度为３．６×１０１５ｃｍ－３；在液氦温度和室温下，与ＩｎＰ晶格匹配的ＩｎＧａＡｓＰ光致发光半峰宽分别为１９．２ｍｅＶ和６３ｍｅＶ；对外延层的组分及厚度均匀性分别进行了转靶Ｘ光衍射仪，低温光致发光和扫描电子显微镜分析，对不同阱宽的量子阱结构材料测出了由于量子尺寸效应导致光致发光波长随阱宽增加而红移现象。
In this paper, the growth conditions of InGaAsp bulk materials and InGaAP / InP quantum well materials grown on (100) InP substrate by LP-MOCVD are studied. Trimethylgallium (TM63), trimethylindium (TMh) and pure arsine (A8H3) and phosphine (PH3) are respectively used as group III and group V sources. In case of unintentional doping, The carrier concentration is 3.6 × 10 15 cm -3; the full width at half maximum of InGaAsP photoluminescence lattice matched with InP is 19.2 meV and 63 meV respectively at liquid helium temperature and room temperature; the composition and thickness of epitaxial layer Homogeneity, X-ray diffraction (XRD), low temperature photoluminescence (PL) and scanning electron microscopy (SEM) were used respectively. The results showed that the photoluminescence wavelength red-shifted with the increase of well width due to quantum size effect phenomenon.