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运用半导体二维数值模拟软件sentaurus TCAD,对基于p型衬底制作的横向抗晕内线转移CCD的弥散特性进行了数值模拟研究,建立了sentaurus TCAD软件模拟横向抗晕内线转移CCD器件仿真模型,对影响器件弥散特性的光敏区n型区域、垂直CCD p阱进行了模拟分析。结果表明,光敏区n型区域注入能量控制在450~550keV,垂直CCD p阱注入能量控制在200~600keV,剂量控制在4.0×10~(12)~8.0×10~(12) cm~(-2),器件弥散特性最佳。
The numerical simulation of the diffusive properties of the horizontal anti-halo CCD based on the p-type substrate has been carried out using the sentaurus TCAD, a two-dimensional semiconductor numerical simulation software. The simulation model of the CCD with the Transient Corona Transfer CCD device has been established by the sentaurus TCAD software. Affect the dispersion characteristics of the device photosensitive area n-type region, vertical CCD p-well simulation analysis. The results show that the implantation energy of the n-type region in the photosensitive region is controlled at 450-550 keV, the implantation energy of the vertical CCD p-well is controlled at 200-600 keV, the dose is controlled at 4.0 × 10-12 (8.0 × 10-12 cm) 2), the best dispersion characteristics of the device.