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绝缘栅型双极性晶体管(insulated gate bipolar transistor,IGBT)模块由于线路杂散电感的存在使得在开通和关断的瞬态过程中产生过大的电压尖峰,过压会使IGBT芯片的集电极电流增大从而导致结温上升,且其是导致IGBT模块失效的一个重要因素,通过有限元仿真软件Ansoft Q3D Extractor对键合线结构IGBT模块的杂散参数进行计算并对其封装结构进行优化,设计可有效降低IGBT模块杂散参数的平板封装结构,结果显示平板封装IGBT模块的主回路杂散电感为11.365 n H,电阻为0.409 m?,与键合线结构IGBT模块相比,杂散电感降低55.1%,电阻降低13.2%。
Insulated gate bipolar transistor (IGBT) modules generate excessive voltage spikes during turn-on and turn-off transients due to stray inductance of the line. Overvoltages cause the collector of the IGBT chip The current increases and the junction temperature increases, and it is an important factor that leads to the failure of the IGBT module. By means of the finite element simulation software Ansoft Q3D Extractor, the stray parameters of the IGBT module with the bonding line structure are calculated and the package structure is optimized, The design of the flat-panel package, which can effectively reduce the spurious parameters of the IGBT module, shows that the stray inductance of the main loop of the IGBT is 11.365 nH and the resistance is 0.409 mΩ. Compared with the bonding wire structure IGBT module, the stray inductance Reduced by 55.1% and resistance by 13.2%.