安阳地区棉花产量及品质与若干气象因素关系初析

来源 :农业气象 | 被引量 : 0次 | 上传用户:ssdmin
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
河南省安阳地区位于我国最大棉区-黄淮海棉区的中心,植棉历史悠久,近年棉田面积200万亩左右。但是产量有高有低并不稳定,品质变化也较大。这固然与经济政策和科学技术密切有关,但气象因素常常是影响棉花产量和品质的重要因素。我们分析了1976—83年安阳地区棉花产量及品质与气象因素的关系,得到一些初步结果,对今后深入研究,进一步认识自然规律,以取得棉花生产更大的主动权有着一定意义。 Anyang in Henan Province is located in the largest cotton area in China - Huanghuai sponge area center, cotton has a long history of cotton fields in recent years an area of ​​200 acres. However, the production of high and low is not stable, quality changes are also larger. Although this is closely related to economic policies and science and technology, weather factors are often the major factors affecting the yield and quality of cotton. We analyzed the relationship between the yield and quality of cotton and the weather in 1976-83 in Anyang, and got some preliminary results. It is of some significance for us to further study and further understand the laws of nature in order to gain greater initiative in cotton production in the future.
其他文献
N-type LaAlO3-δ thin films are epitaxially grown on p-type Si substrates. An enhancement mode field-effect transistor is constructed with oxygen deficient LaAl
期刊
We present a theoretical analysis to the fracture parameters of the large single domain YBCO superconductor with a tangential line crack under electromagnetic f
期刊
Zn1-xFex O inhomogeneous oxide magnetic semiconductor films with high Fe concentration are prepared by sput-tering, and fast annealing is carried out at differe
期刊
A new general network model for two complex networks with time-varying delay coupling is presented.Then we investigate its synchronization phenomena.The two com
期刊
期刊
期刊
We propose a scheme to implement two-bit.quantum phase gates and one-bit unitary gates by using the two-mode two-photon Jaynes-Cummings model.The entanglement b
期刊
赣南蔗区,历年来宿根蔗均占总植蔗面积的60%左右。东乡、玉山和井冈山糖厂蔗区也正在积极发展宿根蔗。实践证明,宿根蔗具有省种、省工、早生快发和早熟高糖的特点,可为糖厂提
A novel PMMA/PMGI/ZEP520 trilayer resist electron beam lithograph(EBL)technology is successfully developed and used to fabricate the 150 nm gate-length In0.7Gao
期刊
期刊