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以酞菁铜为有源层,二氧化硅为绝缘层,钛/金作为电极,制作了沟道宽长比为6 000/10的有机薄膜晶体管。通过比较在不同时期器件在空气环境中的电学特性,分析了环境对器件电学性能的影响。结果表明,在其他条件不变的情况下,当器件置于空气中时,其载流子的浓度和体电导率逐渐增大,迁移率几乎不受影响;相同栅极电压下器件达到饱和状态所需的源漏电压增大,线性区向饱和区推进;阈值电压减小,在栅极电压为0时,界面处逐渐形成导电沟道,器件从增强型向耗尽型转变。
An organic thin film transistor with a channel width to length ratio of 6 000/10 was fabricated using copper phthalocyanine as an active layer, silicon dioxide as an insulating layer, and titanium / gold as an electrode. By comparing the electrical characteristics of the device in air environment at different periods, the influence of environment on the electrical performance of the device is analyzed. The results show that under other conditions, the carrier concentration and bulk conductivity gradually increase when the device is placed in the air, the mobility is almost unaffected; under the same gate voltage, the device reaches the saturation state The required source-drain voltage increases and the linear region advances toward the saturation region. The threshold voltage decreases. At the gate voltage of 0, a conductive channel gradually forms at the interface, and the device transitions from enhancement mode to depletion mode.