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高能离子(MeV/amu)幅照薄膜能够在电子阻止作用区域改善和提高薄膜与基底之间的附着力。实验结果发现,对一定的薄膜—基底系统,当薄膜附着力的增强时辐照离子存在剂最阈值。其中薄膜附着力增强的物理机理和实验研究是当前最引人注目的问题之一。基于高能离子辐照薄膜附着力增强过程中界面化学键增强的观点,建立了一个由界面增强化学键能决定的辐照离子阈剂量的关系。结果发现,对金属薄膜—Teflon,金属膜—硅系统,提出的理论分析关系能够与文献报道的实验结果很好的吻合。此外,用这个理论较好的解释了其它一些实验结果。这对于更进一步理解高能辐照薄膜附着力增强的物理机理,开展能量粒子辐照改善薄膜附着力的应用研究具有一定的参考价值。
The high energy ion (MeV / amu) photo film can improve and increase the adhesion between the film and the substrate in the area of electron blocking action. The experimental results show that for a certain film-substrate system, the irradiation ion-existent agent has the highest threshold when the film adhesion is enhanced. One of the most striking problems is the physical mechanism and experimental study of enhanced film adhesion. Based on the viewpoint of enhanced interface chemical bond in the process of enhancing the adhesion of high-energy ion-irradiated films, a dose-dependent relationship between dose of irradiated ions and interface-enhanced chemical bond energy was established. The results show that the theoretical analysis proposed for the metal thin film-Teflon, the metal-silicon-silicon system can be in good agreement with the experimental results reported in the literature. In addition, the use of this theory to better explain some of the other experimental results. This is of some reference value for further understanding of the physical mechanism of enhanced adhesion of high-energy irradiated films and application of energy particle irradiation to improve film adhesion.