Trapping of hot electron behavior by trap centres located in buffer layer of a wurtzite phase GaN MESFET has been simulated using an ensemble Monte Carlo simula
CeO2/YSZ/CeO2 buffer layers were prepared on biaxial textured Ni-5at.%W substrate by direct-current magnetron reactive sputtering with the optimum process. YBCO
The situation is constructed when the tests are considered as events and the spare test equipments are considered as strategies. The model of grey situation dec
Coverage holes often appear in wireless sensor networks due to sensor failure or the inheritance of sensor's random distribution. In the hybrid model, mobil