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采用ＳＯＬ－ＧＥＬ方法分别在Ｓｉ和含有ＳｉＯ２的衬底上制备出ＰＺＴ铁电薄膜，并获得了ＭＦＳ和ＭＦＯＳ结构．利用ＭＯＳ结构常用的Ｃ－Ｖ特性分析方法，对ＭＦＳ和ＭＦＯＳ结构进行了高频Ｃ－Ｖ特性测试分析，研究了Ｆ／（Ｏ）Ｓ的界面特性，结果表明，金属／ＰＺＴ／ＳｉＯ２／Ｓｉ的ＭＦＯＳ结构具有较低的界面态，可实现极化存储，并可望制成铁电场效应晶体管．
PZT ferroelectric thin films were prepared on Si substrate and SiO2 substrate respectively by SOL-GEL method, and the structures of MFS and MFOS were obtained. The C / V characteristics of MFS and MFOS structures were tested and analyzed by the common C-V analysis method of MOS structure. The interface characteristics of F / (O) S were studied. The results showed that the metal / PZT / SiO2 / Si The MFOS structure has a lower interface state, enabling polarization storage, and is expected to make ferroelectric field effect transistors.