前言由于MOS器件比双极器件包含较少的制造步骤,因而用它们来做成廉价的大容量存储器是很实际的[1]。大规模集成MOS存储器(表1)的迅速发展开始于1970年的256单元的MOS器件[2]。其后转为用电容作为存储数据的动态单元[3]以及制造工艺的改进使增加组装密度成为可能。动态的1024单元的器件已经组成UNIDATA及其它形式的计算机中的标准硬件。我们为未来的存储器[4]已研制成二个4096单元N沟道硅栅工艺的MOS器件 Introduction Since MOS devices contain fewer manufacturing steps than bipolar devices, it is practical to use them as low-cost mass memories [1]. The rapid development of massively integrated MOS memory (Table 1) began in 1970 with 256 units of MOS devices [2]. Later, the use of capacitance as a dynamic cell for storing data [3] and the improvement of the manufacturing process made it possible to increase the packing density. The dynamic 1024-unit device has become standard hardware in UNIDATA and other forms of computers. We have developed two 4096-cell N-channel silicon gate MOS devices for future memory [4]